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| (R) BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE TO-3 1 2 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj June 1998 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) TO - 3 Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 8 15 T O - 218 125 150 ISOW ATT 218 50 -65 to 150 150 150 175 Unit V V V A A W o o -65 to 175 -65 to 150 C C 1/8 BU208D / BU508D / BU508DFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO-218 1 ISO WATT218 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V CE(sat ) V BE(s at) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time Fall T ime Diode Forward Voltage Transition F requency Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 m A I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A 700 1 1.3 T j = 125 C o Min. Typ . Max. 1 2 300 Un it mA mA mA V V V ts tf VF fT I C = 4.5 A hFE = 2.5 VCC = 140 V L C = 0.9 mH L B = 3 H IF = 4 A I C = 0.1 A VCE = 5 V f = 5 MHz 7 550 2 7 ms ns V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area (TO-3) Safe Operating Area (TO-218/ISOWATT218) 2/8 BU208D / BU508D / BU508DFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) Switching Time Percentance vs. Case 3/8 BU208D / BU508D / BU508DFI Figure 1: Inductive Load Switching Test Circuit. 4/8 BU208D / BU508D / BU508DFI TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 5/8 E BU208D / BU508D / BU508DFI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A 6/8 G BU208D / BU508D / BU508DFI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 7/8 BU208D / BU508D / BU508DFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 8/8 |
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